Work

A Design-Oriented Model for AlGaAs/GaAs and AlGaN/GaN HEMT—Part I

Year: 2026

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2026.3651216

Authors: Luigi Colalongo, Simone Comensoli, Paolo Faustini, Anna Richelli

Institutions: University of Brescia, PDF Solutions (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7124171559

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