Work

High-current, high-voltage AlN p–n junction diodes enabled by compositional grading

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0309581

Authors: C. E. Quiñones, P. Reddy, S. Mita, S. Rathkanthiwar, C.-I. Liu, D. Khachariya, R. Kirste, R. Collazo, Z. Sitar

Institutions: North Carolina State University, Adroit Materials (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Sciences Office, DARPA, Air Force Office of Scientific Research, Army Research Office

Awards: G1591479929, G3958261086, G3961799522, G7180752447

OpenAlex ID: W7124249273

FWCI: 9.901

Cites: 44

Cited by: 4

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