Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum
Year: 2026
Type: article
Abstract: Aluminum, the primary structural material used in spacecraft, operates in low Earth orbit (LEO). It is subjected to high-energy electron irradiation with energies ranging from 0.1 to 10 MeV, which produces significant irradiation damage. Understanding the characteristics of irradiation defects with crystallographic orientations is crucial for analyzing the failure of spacecraft components and for developing aerospace materials with improved irradiation resistance. In this study, pure aluminum was irradiated in situ at room temperature using 200 kV transmission electron microscopy. The irradiation defects were comparatively analyzed for four crystallographic orientations, focusing on the size, density, and interstitial content of <111> and <110> dislocation loops. For all four irradiation directions, the interstitial atom density (IAD) within <111> loops is significantly higher than that in <110> loops. Notably, under [110]-direction irradiation, IAD in <111> loops is approximately 55 times that in <110> loops. This phenomenon is attributed to the one-dimensional migration of <110> loops. Among the four irradiation directions, the total IAD in the two types of loops decreases in the order: [110] > [111] > [310] > [100]. The threshold displacement energy (Ed) of aluminum at room temperature is inferred to follow the relationship: [110] < [111] < [310] < [100].
Source: Materials
DOI: 10.3390/ma19020350
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W7124295622