Work

On-Chip Polarimetric Photodetector with High Polarization Extinction Ratio and Extended SWIR Response Using PdSe 2 /InGaAs/InP Vertical P-I-N Heterostructure

Year: 2026

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c05862

Authors: Xiaohuan Wei, Mengyu Ge, Shaoqiu Ke, Shaoqiu Ke, Shengyan Zu, Jinyu Kang, Xiaojia Xu, Zhiming Li, Yiliang Chen, Bin Liu, Shaopeng Chen, Zhiwei Huang, Guanzhou Liu, Jinrong Zhou, Shaoying Ke, Shaoying Ke

Institution: Minnan Normal University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Fujian Province

Awards: G2888382202, G62690279, G6381508109, InP-O-I基高Sn组分GeSn薄膜外延生长及其中红外探测性能研究

OpenAlex ID: W7124420857

FWCI: 9.776

Cites: 52

Cited by: 7

Related to: