Work

Charge Trapping Dynamics of Nanofloating Gates in Synaptic Transistors Revealed by Genomic Simulation for High-Performance Neuromorphic Device Design

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c24342

Authors: Lanbin Huang, Weiwei Gao, Jiajun Xiong, Jiali Liang, Donghua Ye, Gengxu Chen, Huipeng Chen

Institutions: Fuzhou University, Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Fujian Province, National Key Research and Development Program of China

Awards: G3361334131, G4828513495, G6663189067, G8692624080

OpenAlex ID: W7124423642

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Cites: 39

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