Oxidation degradation of TiN electrodes in DRAM capacitors and mitigation through AlN insertion
Year: 2026
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0309909
Authors: Songming Miao, Xinyi Tang, Guangwei Xu, Yuanbiao Li, Xiao Chen, Di Lu, Shibing Long
Institution: University of Science and Technology of China
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1221847750, G1254210658, G8991935312
OpenAlex ID: W7124452175