Work

Ultrahigh Photocurrent in a Self-Powered Deep Ultraviolet Photodetector via P+/P/N-β-Ga 2 O 3 Heterojunction and Patterned Top-Electrode Design

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c02534

Authors: Jihyeong Kim, Haechan Kim, Seungbok Yun, Yuta Kubota, Nobuhiro Matsushita, Gonjae Lee, Jeongsoo Hong

Institutions: Gachon University, Tokyo Institute of Technology, Institute of Science Tokyo, Mando Corporation (South Korea)

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Gachon University, Ministry of Trade, Industry and Energy

Awards: G2118689819, G7240170150

OpenAlex ID: W7124465713

FWCI:

Cites: 68

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