Work

Wet etching mechanisms of III-N materials under KOH

Year: 2025

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Jaloustre, Lucas, Sales de Mello, Saron-Rosy, Valera, Lucie, Labau, Sébastien, Petit-Etienne, Camille, Jacopin, Gwénolé, Durand, Christophe, Pargon, Erwine

Institutions: Laboratoire des Technologies de la Microélectronique, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7124514714

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