Wafer-scale bubble-free Si-on-SiC fabricated by plasma activated bonding technology
Year: 2026
Type: article
Abstract: The 6-inch bubble-free, stressless Si-on-SiC (SOSiC) wafer was fabricated for improving heat dissipation and radio frequency (RF) performance of RF front-end modules applied in 6G technology. Coplanar waveguide (CPW) devices fabricated on SOSiC wafer show higher effective resistivity (ρ eff ≥ 10 3 Ω·cm, 100 MHz-11 GHz) and lower attenuation coefficients (α ≤ 0.20 dB/mm, 100 MHz-13 GHz) than those on HR-SOI. The effective thermal conductivity (TC eff ) of SOSiC wafers with BOX thicknesses of 10 nm, 16 nm, and 22 nm is 58.4 MW/m 2 ·K, 50.2 MW/m 2 ·K, and 40.9 MW/m 2 ·K, respectively. The newly fabricated SOSiC wafer has the potential for 6G front-end applications.
Source: Applied Surface Science
Authors: Zeming Huang, Yuan Gao, Tianhao Zhou, Chao Yang, Wenkai Liu, Yongwei Chang, Yun Liu, Ding Wang, Zhongying Xue, Xing Wei
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,930
Awards: G295075973, G6595111662
OpenAlex ID: W7124833755