Work

Optical Absorption and Emission in Nitrogen‐Implanted Ga 2 O 3 Controlled by Dynamic Defect Annealing

Year: 2026

Type: article

Source: Advanced Optical Materials

DOI: 10.1002/adom.202503595

Authors: Alexander Azarov, Augustinas Galeckas, Umutcan Bektas, Gregor Hlawacek, Andrej Kuznetsov

Institutions: University of Oslo, Helmholtz-Zentrum Dresden-Rossendorf

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Norges Forskningsråd, Sächsische Aufbaubank

Awards: G439369489, G5037537788, G5238394755, G8006273601

OpenAlex ID: W7124849268

FWCI: 2.948

Cites: 48

Cited by: 3

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