Work

3D vertical resistive random-access memory (3D-VRRAM) for analog in-memory computing

Year: 2025

Type: conference-paper

Source: Non-Volatile Memory Technology Symposium

DOI: 10.1109/nvmts67274.2025.11349411

Authors: D. Bridarolli, F. Carletti, S. Ricci, M. Porzani, P. Mannocci, M. Farronato, D. Ielmini

Institution: Politecnico di Milano

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Research Council

OpenAlex ID: W7124881178

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Cites: 8

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