Work

Engineering neuromorphic phase-change memory: Carbon-doped GeSbTe with high thermal stability and low resistance drift

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0303105

Authors: Hengyi Hu, Shaojie Yuan, Siqi Tang, Qundao Xu, Meng Xu, Qiang He, Hao Tong, Songyou Wang, Cai-Zhuang Wang, Xiangshui Miao, Ming Xu

Institutions: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, University of Hong Kong, Fudan University, United States Department of Energy, Iowa State University, Ames National Laboratory

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Natural Science Foundation, National Key Research and Development Program of China

Awards: G2316096544, G3578084377, 三维垂直结构相变存储器关键技术研究, G7698048171

OpenAlex ID: W7124886446

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Cites: 46

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