Work

Oxygen vacancy control engineering in Ga2O3/4H-SiC Schottky rectifiers

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0293743

Authors: Ji-Hyun Kim, Jin-Woo Choi, Chowdam Venkata Prasad, Ye-Jin Kim, Seung-Hyun Park, Chang-Jun Park, Geon-Hee Lee, Jong-Min Oh, Sang-Mo Koo

Institution: Kwangwoon University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G3027870600, G4415256126, G4614803186

OpenAlex ID: W7124894369

FWCI: 1.976

Cites: 47

Cited by: 2

Related to: