Epitaxial Growth of Degenerately Doped Ga 2 O 3 Films on GaN (0001) as a Deep Ultraviolet Transparent Electrode for Opto‐Electronics Applications
Year: 2026
Type: article
Source: Advanced Optical Materials
Institutions: Xiamen University, Fudan University, Chinese Academy of Sciences
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Award: G8617141004
OpenAlex ID: W7124896211
