A CMOS-Compatible Heterogeneous 3-D Integration Platform for Silicon Nanoelectromechanical Switches
Year: 2026
Type: article
Abstract: Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.
Source: IEEE Electron Device Letters
Authors: Yingying Li, Simon J. Bleiker, Elliott Worsey, Mukesh Kumar Kulsreshath, Qi Tang, Christian Reich, Stefan Ernst, Shyamprasad N. Raja, August Djuphammar, Kristinn B. Gylfason, Dinesh Pamunuwa, Frank Niklaus
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7125011357