Work

Universal role of dopant-VGa complexes induced carrier suppression in Si/Ge/Sn/Zr-doped β -Ga2O3

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0301321

Authors: Taiqiao Liu, Xinglin Liu, Ziqian Sheng, E Zhou, Tongtong Wang, Qijun Wang, Yao Lu, Biao Meng, Kelvin - HL Zhang, Feng Ren, Lei Ye, Qiangmin Wei, Yuzheng Guo, Sheng Liu, John Robertson, Zhaofu Zhang

Institutions: Wuhan University, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Xiamen University, University of Cambridge

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3958004537, G5586658670, G8617141004

OpenAlex ID: W7125239584

FWCI: 2.948

Cites: 54

Cited by: 3

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