Work

Multifunctional 2H‐MoTe 2 Device Enabling Broadband Self‐Powered Photodetection and On‐Chip Miniaturized Spectrometry

Year: 2026

Type: article

Abstract: ABSTRACT Controlling carrier polarity in 2D semiconductors is essential for complementary electronics but is hindered by Fermi‐level pinning. Here, we demonstrate contact engineering in 2H‐MoTe 2 using high‐work‐function Pt and low‐work‐function Bi to realize p‐type and n‐type field‐effect transistors. An asymmetric Pt/2H‐MoTe 2 /Bi configuration enables a self‐powered broadband photodetector with a 430–1400 nm response, a maximum responsivity of 1.06 A/W, and a detectivity of 1.86 × 10 12 Jones. The device exhibits fast photoresponse (7.53 µs for rise time and 2.39 µs for fall time) and a cutoff frequency > 50 kHz, allowing real‐time near‐infrared optical communication via ASCII‐encoded binary signals. Integrating the same architecture with computational spectroscopy algorithms yields a miniaturized spectrometer (430–1400 nm), achieving 5 nm spectral resolution at ≤ 1 V drain bias. This unified, low‐power, and high‐speed platform demonstrates broadband spectral reconstruction and color imaging, highlighting the potential of contact‐engineered 2D semiconductors for next‐generation on‐chip spectroscopy and optical communication.

Source: Small

DOI: 10.1002/smll.202514754