Work

Structures and Adsorption Behavior on N-Polar GaN(0001) Surface with Steps and Kinks: A DFT Study

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01483

Authors: Toru Akiyama, Taiki Tahara, Takahiro Kawamura

Institution: Mie University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Kyushu University, Japan Society for the Promotion of Science, Strategic International Collaborative Research Program

Awards: Crystallographic Mapping of Nonpolar Plane Growth in Nitride Semiconductors and Its Application to Far-Ultraviolet LEDs, Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices, Development of bond engineering descriptors and its application to widegap semiconductor crystal growth, G6044920683

OpenAlex ID: W7125386403

FWCI:

Cites: 53

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