Work

Study on the single-event burnout mechanism of β- Ga2O3 heterojunction diodes under heavy-ion irradiation

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0314929

Authors: Yahui Feng, Hongxia Guo, Jinxin Zhang, Wuying Ma, Xiaoping Ouyang, Fengqi Zhang, Yanhui Cao, Xiaohua Ma, Yue Hao

Institutions: Xidian University, Northwest Institute of Nuclear Technology, Xiangtan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G31660630, G4396751572

OpenAlex ID: W7125411826

FWCI: 0.988

Cites: 34

Cited by: 1

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