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High-Brightness Micro-LED Achieved by Controlled n-GaN Thinning via RIE

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01960

Authors: Zeyang Meng, Guanghua Wang, Sibo Gao, Feng Deng, Shuxiong Gao, Guoru Gou, Wenyun Yang, Shumin Sun, Chunhang Yang

Institutions: Yunnan University, Kunming Institute of Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Yunnan University, National Science and Technology Major Project

Award: G7294745011

OpenAlex ID: W7125451332

FWCI:

Cites: 17

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