Breaking Concentration Quenching for Excellent Highly Efficient and Stable Narrowband Luminescence by Structural Ordering and Defect Regulation
Year: 2025
Type: article
Abstract: ABSTRACT Enhancing the performance of phosphor materials for wide‐color‐gamut and high‐brightness phosphor‐converted light‐emitting diodes (pc‐LEDs) represents a critical materials challenge. Improving quantum efficiency (QE) under concentration quenching constraints and maintaining thermal stability remain primary objectives. Here, we propose a nitrogen‐aluminosilicate host, La 1‐ x Si 9 Al 19 N 32 (L 1‐ x ASN): x Eu 2+ (0.1 ≤ x ≤ 1.0), with a highly condensed network. Through cationic ordering and optimized local crystal field configurations under ultrahigh activator doping ( x = 1.0), we achieved enhanced structural rigidity that effectively suppresses nonradiative energy transfer. This strategy resulted in external quantum efficiency (EQE) increases of 332% for the x = 1.0 sample relative to the x = 0.5 sample, the optimal doping concentration. The high structural rigidity and artificially created nitrogen vacancy defect compensate for emission loss during the thermal generation process, improving thermal stability at x = 1.0 by 278% compared to x = 0.5. The designed phosphor enables pc‐LEDs with a wide color gamut (106.6% NTSC) and ultrahigh brightness (8.56 × 10 6 cd m −2 ). This study advances the understanding of the relationship between luminescent properties and microstructure, demonstrating the effectiveness of structural ordering and defect engineering in enhancing the performance of LED phosphors.
Source: Rare Metals
DOI: 10.1002/rar2.70087
Authors: Yuhan Zhou, Ruijie Ji, Zhezhe Su, Yuhua Wang
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,190
Award: G3892841133
OpenAlex ID: W7125636769