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Universal Ohmic contacts to β -Ga2O3 using interfacial dipoles of ultra-thin MgF2 layer and related defect passivation

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0308375

Authors: Shivani, Vinit Sheokand, Jiya, Chaitanya B. Auti, Pradeep Kumar, Mukesh Kumar

Institutions: Indian Institute of Technology Ropar, Indian Institute of Technology Mandi

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Government of Rajasthan

Award: G7052057863

OpenAlex ID: W7125684587

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Cites: 25

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