Year: 2026
Type: article
Abstract: ABSTRACT Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.
Source: Advanced Electronic Materials
Institutions: University of Wisconsin–Madison, University of Pittsburgh
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
Awards: G1303726027, Collaborative Research: DMREF: NSF-BSF: Moire-Engineered Oxide Membrane Heterostructures by Design, G187035202, G1911915008, Wisconsin MRSEC, G222768804, G3242366974, GROWTH AND CHARACTERIZATION OF ATOMIC LAYER CONTROLLED MGB2 THIN FILMS, G336435217, GROWTH AND CHARACTERIZATION OF ATOMIC LAYER CONTROLLED MGB2 THIN FILMS, G4503428130, G5590387194, G5648016710, G6420496198, G6832210154, Chang-Beom Eom Materials Synthesis Investigator, G8876996369
OpenAlex ID: W7125789547