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Exploring the impact of aspect ratio and O2 flow rate on the etch rate ratio of SiO2 at the bottom and top of the trench

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005141

Authors: Leyi Zhang, Zhihong Gao, Dongyu Cen, Yongzhi Fang, Maoxiang Liu

Institution: Jiangnan University

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7125968144

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Cites: 13

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