Work

Resolving the On–Off Ratio Discrepancy in Bilayer 3R-MoS 2 FeSFETs: Dual Mechanisms of Domain Wall Engineering

Year: 2026

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Bilayer 3R-MoS 2 ferroelectric semiconductor field-effect transistors (FeSFETs) commonly attributed the device’s ON-OFF switching to reversible transformation between up and down polarization, without considering the electronic properties of the domain walls (DWs) in MoS 2 . In this work, we use density functional theory combined with nonequilibrium Green’s function methods to show that DWs formation would induce electronic reconstruction at neighboring ferroelectric domains, thereby enhancing their polarization. We also found that local compressive strain in the DW can effectively increase the local conduction band minimum, drastically suppress the OFF-state current in FeSFETs. While pristine single-domain devices exhibit ON-OFF ratios of only 6.5 (armchair) and 3.8 (zigzag) at V G = 0 V, junctions incorporating DWs can yield remarkably higher ratios of 99.1 and 33.5, respectively. This work establishes that enhanced polarization and suppressed conductance due to DWs present new avenues for improving the performance of MoS 2 -based FeSFETs.

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c05273

Authors: Yee-Heng Teh, Horng-Tay Jeng

Institutions: National Tsing Hua University, Chung Yuan Christian University, National Center for Theoretical Sciences, Academia Sinica

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funder: National Science and Technology Council