Work

Epitaxial InGaAs Films Directly Grown on Si(001) for 1.5 μm Light Emission

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01521

Authors: Dong Han, Wen-Qi Wei, Zhijiang Chen, Zihao Wang, Ting Wang, Jian-Jun Zhang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, Institute of Physics, Songshan Lake Materials Laboratory, University of Chinese Academy of Sciences

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences

Awards: G150650349, G2546467890, G5191045314, G597800956, G6771612379, G6902223695

OpenAlex ID: W7126033593

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Cites: 39

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