Work

Mid-infrared entanglement in 220 nm silicon

Year: 2026

Type: article

Abstract: Silicon photonics in the mid-infrared is a promising platform for quantum technologies. Previous demonstrations of silicon mid-infrared quantum optics have used a 340 nm silicon layer height. In this work, we use industry-standard 220 nm silicon to implement a novel, to the best of our knowledge, photon-pair source with a peak coincidence-to-accidental ratio (CAR) of 20.9±2.9 at a net measured rate of 0.63±0.02 Hz and an inferred source efficiency of 2.85±0.04 MHz W −2 . Finally, we report the first integrated mid-infrared entanglement, generating a Bell state with a fidelity of F =94±2%.

Source: Optics Letters

DOI: 10.1364/ol.572784

Authors: Sebastian G. Currie, Samuel W. A. Gears, Jeremy C. Adcock, Dominic A. Sulway, Joshua W. Silverstone

Language: English

Topic: Quantum Information and Cryptography

Subfield: Artificial Intelligence

Field: Computer Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: UK Research and Innovation, Leverhulme Trust, Engineering and Physical Sciences Research Council

Awards: EPSRC Centre for Doctoral Training in Quantum Engineering, G2734167181, G432395345, G5398019408, G6825409167

OpenAlex ID: W7126038278

FWCI: 3.552

Cites: 21

Cited by: 1

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