Work

Damage and the Mechanism in PIN–PMN–PT Relaxor Ferroelectric Single Crystals by H + Ion Implantation Technology for Nanoscale Thin Films

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c21000

Authors: Xinjian Wang, Zheming Chen, Jianfeng Chen, Yong Long, Menghan Xiao, Yang Zhang, Kai Zhang, Jiamin Ji, Wenting Luo, Xing Pang, Yuchong Ding, Zhihong Wang, Xiaoyong Wei, Jinyi Ma, Zhuo Xu

Institutions: Xi'an Jiaotong University, China Electronics Technology Group Corporation

Language: English

Topic: Ferroelectric and Piezoelectric Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2850373855

OpenAlex ID: W7126053530

FWCI: 1.397

Cites: 62

Cited by: 1

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