Work

High-Performance (PEA) 2 PbI 4 /SnS 2 van der Waals Heterostructure Phototransistor with Gate-Tunable Breaking of the Responsivity–Speed Trade-Off

Year: 2026

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.5c21721

Authors: Fobao Huang, Yiyao Sun, Junjun Hu, Chunxiao Liu, Hengle Zhou, Nanyu Chen, Tianlun Li, Yao Li, Gongwei Hu, Wei Huang

Institutions: Northwestern Polytechnical University, Lanzhou Jiaotong University, China Three Gorges University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Hubei Provincial Department of Education, Natural Science Foundation of Hubei Province, Jiangsu Association for Science and Technology, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1181834046, G3754531970, G5174958102, G6732678728

OpenAlex ID: W7126069979

FWCI: 2.793

Cites: 57

Cited by: 2

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