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Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC

Year: 2025

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm50572.2025.11353770

Authors: Prasanna Venkatesan, Yueyun Chen, Tristan P. O’Neill, Ho Leung Chan, Hari Jayasankar, Priyankka Ravikumar, Zekai Wang, Shelby S. Fields, Megan K. Lenox, William A. Hubbard, Andrea Padovani, Luca Larcher, Gaurav Thareja, Shimeng Yu, Jon F. Ihlefeld, Wanki Kim, Daewon Ha, Brian C. Regan, Asif Khan

Institutions: Georgia Institute of Technology, University of California, Los Angeles, University of Virginia, Applied Materials (United States), Samsung Electronics (South Korea)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Office of Science, Basic Energy Sciences

OpenAlex ID: W7126252467

FWCI:

Cites: 5

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