Work

Temperature‐dependent electrical resistivity in In–Sn alloys with varied phase composition and ternary element levels

Year: 2026

Type: article

Abstract: The In–Sn alloys which have low melting point are technically important for many applications, especially for those involving cryogenic temperatures. Because electrical resistivity is critical to electronic devices, the resistivity of alloys from the In–Sn system and potential variations that can result from elemental additions require investigation. Resistivity depends on temperature, microstructure, and local composition. By linking solidification paths, phase constitution, and microstructure in binary In–Sn and modified alloys, we show that the resistivity in the β-In 3 Sn phase rises with solute dissolution and that Ga, Ag, and Bi each increase resistivity by different mechanisms. Supported by Differential Scanning Calorimetry (DSC), Scanning Electron Microscopy (SEM), CALPHAD, X-Ray Diffraction (XRD), and Electron Backscatter Diffraction (EBSD) data, we show that mechanisms including lattice distortion, precipitation, and boundary-induced scattering affect both the resistivity and the Temperature Coefficient of Resistance (TCR).

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1007/s10854-026-16650-0

Authors: Jiye Zhou, Hanyue Ye, Xin F. Tan, Stuart D. McDonald, Kazuhiro Nogita

Institution: The University of Queensland

Language: English

Topic: Thermodynamic and Structural Properties of Metals and Alloys

Subfield: Mechanical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,990

Funders: University of Queensland, Nihon Superior, Australian Research Council