Work

Hypotaxy‐Enabled Selective Growth of MoS 2 for Laterally‐Connected Edge and van der Waals Bottom Contacts

Year: 2026

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202528582

Authors: Donghoon Moon, Yoona Kim, Jiwon Lee, Jiwoo Kim, Hyun‐Young Choi, Huije Ryu, Junyoung Kwon, Gwan‐Hyoung Lee

Institutions: Seoul National University, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7127049417

FWCI: 2.893

Cites: 29

Cited by: 2

Related to: