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Global Investigation on Thermodynamic Properties of the Si–Cr Solvent for SiC Growth

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Year: 2026
Type: article
Source: Crystal Growth & Design
DOI: 10.1021/acs.cgd.5c01649
Authors: Zihai Li, Wenlong Wu, Zhongnan Guo, Guangda Chen, Da Sheng, Yunfan Yang, Hui Li, Zhanmin Cao, Wenxia Yuan
Institutions: University of Science and Technology Beijing, Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences
Language: English

Topic: Silicon Carbide Semiconductor Technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W7127052571
FWCI: 1.692
Cites: 47
Cited by: 1
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