Work

An Improved High-Frequency FinFET Model Capturing the Cryogenic Tunneling Effect

Year: 2026

Type: article

Source: IEEE Transactions on Microwave Theory and Techniques

DOI: 10.1109/tmtt.2025.3644367

Authors: Shihan Xiang, Yunqiu Wu, Jun Liu, Huihua Liu, Chenxi Zhao, Yiming Yu, Giovanni Gugliandolo, Nicola Donato, Giovanni Crupi, Yuehang Xu, Kai Kang

Institutions: University of Electronic Science and Technology of China, Hangzhou Dianzi University, University of Messina

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Project of Shandong Province Higher Educational Science and Technology Program, Natural Science Foundation of Sichuan Province

Awards: G3229901489, G4167916329, G6682819074

OpenAlex ID: W7127069818

FWCI:

Cites: 25

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