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Chip‐Scale Graphene/IGZO Cold Source FET Array Enabling Sub‐60 mV dec −1 Super‐Steep Subthreshold Swing (Adv. Mater. 7/2026)

Year: 2026

Type: article

Abstract: Super-Steep Subthreshold Swing In their Research Article (DOI: 10.1002/adma.202510618), Woojin Park, Yonghun Kim, Byungjin Cho, and co-workers demonstrate super-steep subthreshold swing (SS) below 60 mV dec−1 in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppress the Boltzmann thermal tail, while high-k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is achieved in the array, enabling ultralow-power, high-speed electronics.

Source: Advanced Materials

DOI: 10.1002/adma.72129

Authors: Seyoung Oh, Ojun Kwon, Jongwon Yoon, Eunjeong Cho, Min Jeong Kim, Wondeok Seo, Minhee Kim, Shinhoi Kim, Yeongeun Kwon, Yung Joon Jung, Kyungrok Kang, Woojin Park, Yonghun Kim, Byungjin Cho

Institutions: Chungbuk National University, Korea Institute of Materials Science, Northeastern University, Samsung (South Korea), Samsung Electronics (South Korea), Chungbuk National University Hospital

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W7127098009

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