Year: 2026
Type: article
Abstract: ABSTRACT We investigated a TiO 2 ‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (FeFETs) employing a metal‐ferroelectric‐metal‐insulator‐semiconductor (MFMIS) architecture. Although the MFMIS configuration facilitates optimized voltage distribution and suppresses charge injection into the dielectric layer, interfacial defects—particularly oxygen vacancies (V O s)—at the floating gate/ferroelectric interface continue to degrade switching performance. To address this issue, we introduced an ultrathin TiO 2 interlayer between the floating gate (FG) and the ferroelectric layer. Acting as an oxygen reservoir, the TiO 2 interlayer effectively mitigates V O formation and stabilizes the interfacial structure. X‐ray photoelectron spectroscopy and electron energy loss spectroscopy analyses confirm a reduced concentration of V O at the interface. Consequently, TiO 2 ‐inserted MFMIS devices exhibit enlarged and more stable memory windows, along with enhanced ferroelectric characteristics. Furthermore, low‐frequency noise analysis reveals a significant reduction in defect‐related fluctuations, indicating suppressed trap dynamics. Collectively, these results demonstrate that TiO 2 interface engineering offers a scalable and complementary metal‐oxide‐semiconductor‐compatible strategy to address reliability challenges in hafnia‐based ferroelectric transistors.
Source: Advanced Electronic Materials
Authors: Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon
Institution: Hanyang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
Funder: Hanyang University
Award: G7140559115
OpenAlex ID: W7127414773