Work

SiC and GaN boost convert with or not cryogenic coil comparison

Year: 2025

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Phulpin, Tanguy, Dupont, Louis, Marret, Amandine, Mussa, Samir, A, Quéval, Loïc

Institutions: Université Paris-Saclay, Laboratoire de Génie Électrique et Électronique de Paris, CentraleSupélec, Universidade Federal de Santa Catarina

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7127553949

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