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XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Year: 2026

Type: article

Abstract: Single-Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co-workers demonstrate single-crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance. AlN XHEMTs feature ultra-thin GaN channels fully strained between AlN layers, eliminating epitaxy-substrate thermal boundary resistance. By leveraging AlN's superior thermal conductivity, these XHEMTs promise to overcome thermal performance limitations.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.70252

Authors: Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing

Institution: Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,560

OpenAlex ID: W7127586381

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