1064 nm InGaAsP multi-junction laser power converters via reverse-bias method
Year: 2026
Type: article
Abstract: Laser power converters (LPCs) are key to improving wireless energy transmission efficiency. We designed and fabricated single- and multi-junction 1064 nm laser power converters on InP substrates. By optimizing the tunnel junction, the double-junction laser power converter achieved 45.7% efficiency at an operating temperature of 10℃ and an incident laser power of 11.504 W/cm 2 , while the six-junction reached 39.8% at 7℃ and 30.6 W/cm 2 . A systematic design optimization approach for multi-junction LPCs was demonstrated through reverse-bias analysis of the current mismatch. Using this method, the InGaAsP absorption coefficient (∼1.41 × 10 4 cm −1 ) was extracted. Based on the recalculated absorption coefficient, the subcell thicknesses were redesigned and tunnel junction growth was further optimized, raising the six-junction efficiency to 42.4% at 5°C and 28 W/cm 2 .
Source: Optics Express
DOI: 10.1364/oe.587964
Authors: Di Feng, Jun Wang, Hongru Li, Yang Cheng, Jiaxin Chen, Hao Zhou, Hao Zhang, Quanling Li, Shujuan Sun, Hao Yu, Liping Qiu, Yao Xiao, Guoliang Deng, Yudan Gou
Institution: Everbright International (China)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Awards: G1899141608, G3723053153
OpenAlex ID: W7127918762