Work

Future of Power and High‐Speed/RF Electronics with Advanced High‐Performance GaN and Heterogeneous Integration with Silicon CMOS

Year: 2026

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500873

Authors: Han Wui Then, Ahmad Zubair, Samuel Bader, Pratik Koirala, Michael Beumer, Heli Vora, Prafful Golani, Marko Radosavljevic

Institution: Intel (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W7127978273

FWCI: 2.393

Cites: 83

Cited by: 1

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