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Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer (Adv. Mater. Technol. 3/2026)

Year: 2026

Type: article

Abstract: Aluminum-Based Hybrid Resists The cover image illustrates an aluminum-based hybrid resist synthesized by molecular layer deposition and its representative molecular structure. Localized photochemical transformation induced by e-beam and/or EUV exposure leads to selective crosslinking and densification within the resist matrix, forming high-resolution nanopatterns with excellent etch resistance. These features are directly transferred into Si substrates, achieving ultra-high aspect ratio nanostructures for next-generation nanolithography. More details can be found in the Research Article by Jiyoung Kim, Chang-Yong Nam, and co-workers (10.1002/admt.202501639).

Source: Advanced Materials Technologies

DOI: 10.1002/admt.70693

Authors: Won‐Il Lee, Dan N. Le, Matthew Yen, Melinda Lin, Ashwanth Subramanian, Xiao Tong, Nikhil Tiwale, Jiyoung Kim, Chang‐Yong Nam

Institutions: Stony Brook University, The University of Texas at Dallas, Brookhaven National Laboratory, Center for Functional Nanomaterials

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W7127986104

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