Work

Low-Defect GaN Epitaxy under In Situ AlN Buffer Using Novel MOCVD

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01352

Authors: Guobin Wang, Jianjie Li, Chunyang Xu, Qi’ang Yan, Ziwei Wang, Kaihui Chen, Yu Xu, Zongliang Liu, Jianfeng Wang, Wei Zhang, Bing Cao, Ke Xu

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Soochow University, Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Modern Optical Technologies of Education Ministry of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G3557943267

OpenAlex ID: W7128000335

FWCI:

Cites: 24

Cited by:

Related to: