Work

Atomic-Layer-Deposition of Sn-Incorporated MoO 2 Films as an Interface Control Layer for High-Performances TiO 2 -Based DRAM Capacitors

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c24654

Authors: Jae Hyeon Lee, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han

Institutions: Seoul National University of Science and Technology, Korea Research Institute of Chemical Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G4188927841, G5954986726, G8862721571, G988323058

OpenAlex ID: W7128022437

FWCI:

Cites: 31

Cited by:

Related to: