Work

Radiation-induced Luminescence of Eu-doped Ga2O3–SiO2 Glasses

Year: 2026

Type: article

Abstract: In this study, Eu-doped (0.1, 0.3, 1.0, and 3.0%) Ga 2 O 3 -SiO 2 glasses were synthesized by the melt-quenching method using a floating zone furnace.The 0.1-1.0%Eu samples were partially crystallized glasses, which included the cristobalite phase, whereas the 3.0% Eu sample indicated only a halo pattern.All the samples showed the emission originating from divalent Eu ions at around 450 nm in photoluminescence and scintillation.Therefore, it was found that selfreduction occurred in all the samples.The full-energy peak under irradiation with α-rays of 241 Am was observed in all the samples, and the 1.0% Eu sample showed the highest light yield of 100 photons/5.5MeV.

Source: Sensors and Materials

DOI: 10.18494/sam6008

Authors: Akihiro Nishikawa, Daiki Shiratori, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, Takayuki Yanagida

Institutions: Nara Institute of Science and Technology, Tokyo University of Science

Language: English

Topic: Radiation Detection and Scintillator Technologies

Subfield: Radiation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $748

Funders: Research Center for Biomedical Engineering, Japan Society for the Promotion of Science