Year: 2026
Type: article
Abstract: ABSTRACT The monolithical integration of infrared (IR) laser sources onto a silicon platform remains a fundamental challenge in advancing silicon photonics, largely due to the lattice mismatch between silicon and conventional epitaxial semiconductors. In this work, we report the first demonstration of edge‐emitting, first‐order distributed feedback (DFB) lasers based on solution‐processed colloidal quantum dots (CQDs) integrated onto a silicon/silicon dioxide (Si/SiO 2 ) platform. By systematically optimizing the buried oxide (BOX) layer thickness, we identify a 5 µm threshold required to suppress mode leakage into the high‐index silicon substrate and maximize modal gain. By carefully optimizing the grating duty cycle and incorporating a λ/4 phase shift, we achieved spectrally pure, single‐mode lasing with a narrow linewidth of 0.9 meV (2.1 nm), tunable across the 1580 –1680 nm range on a silicon platform. This work establishes a scalable, CMOS‐compatible strategy for on‐chip infrared lasers, overcoming a critical bottleneck for fully integrated silicon photonics.
Source: Advanced Optical Materials
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,880
OpenAlex ID: W7128158505