Work

Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0278306

Authors: Guangjie Gao, Zhihong Liu, Lu Hao, Hanghai Du, Weichuan Xing, Hu Wei, Xin Feng, Hong Zhou, Jincheng Zhang, Yue Hao

Institutions: Xidian University, Guangzhou Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, National Science Fund for Distinguished Young Scholars

Awards: G2204112166, G5130430070, G5827088624

OpenAlex ID: W7128189798

FWCI: 1.292

Cites: 24

Cited by: 4

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