Year: 2026
Type: article
Abstract: High electrical conductivity is crucial for electrics, electronics, communications. Eliminating defects such as grain boundaries and impurities is a primary approach to enhancing electrical conductivity in metals. Although reducing electron-phonon interaction can further contribute to electrical conductivity, only a marginal enhancement is obtained by imposing external pressure even high up to gigapascal. Here we report a contrary strategy to transforming defects into conductive benefits, by forming abundant defects of severely distorted lattice via heterogeneous interface-assisted plastic deformation in metal (copper). Such lattice distortions are generated under a non-extreme condition, and cause internal giant local stress significantly suppressing electron-phonon coupling and thus reducing phonon-caused electron scattering. Consequently, a striking bulk electrical conductivity of > 110% IACS is obtained in the copper at room temperature, which is equivalent to the effect of an external high pressure of about 10 gigapascals. Our work provides an extendable approach for developing high-performance metal conductors. Giant local stress was formed by introducing heterogeneous interfaces, thus suppressing electron-phonon coupling and reducing electron scattering. Consequently, a bulk electrical conductivity of > 110 % IACS is obtained in copper at room temperature.
Source: Nature Communications
Institutions: Shanghai Jiao Tong University, State Key Laboratory of Metal Matrix Composites, Henan University of Science and Technology, East China Normal University, Harbin Institute of Technology, State Key Laboratory of Advanced Welding and Joining, Henan Academy of Sciences, Chinese Academy of Sciences, Shanghai Institute of Applied Physics
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
OpenAlex ID: W7128360848