Work

A T-STATCOM converter structure synergistically combining IGBTs and SiC-MOSFETs

Year: 2026

Type: article

Abstract: The paper presents a novel converter topology for a Transmission-type Static Synchronous Compensator (T-STATCOM) that optimally integrates Silicon IGBTs (Si-IGBTs) and Silicon Carbide MOSFETs (SiC-MOSFETs) through a coupling transformer with an open-end secondary winding. One side is connected to a three-level neutral-point clamped (3LC) converter using Si-IGBTs, while the other side is connected to a two-level PWM (2LC) converter based on SiC-MOSFETs. Exploiting the high switching frequency of SiC devices, the 2LC performs harmonic compensation and reactive power control, eliminating the need for bulky passive filters and enhancing overall efficiency. The proposed 8 MVAr, 154 kV T-STATCOM system is validated through simulation, while a 6 kVAr scaled-down experimental prototype confirms its performance. The proposed solution achieves up to a 50% reduction in total losses and component costs compared to state-of-the-art designs, ensuring low losses, moderate cost, and THDv compliant with IEEE Std. 519-2014.

Source: Electric Power Systems Research

DOI: 10.1016/j.epsr.2026.112835

Authors: Salvatore Foti, Gioele Baia, Haseeb Hassan Khan, Antonio Testa, Michele Emanuele

Institutions: University of Messina, Istituto Universitario di Studi Superiori di Pavia, University of Catania, Terna (Italy)

Language: English

Topic: Multilevel Inverters and Converters

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $2,810