Work

Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs

Year: 2026

Type: article

Source: Low Temperature Physics

DOI: 10.1063/10.0042291

Authors: Jo‘shqin Sh. Abdullayev, Dildora A. Qalandarova, Madinabonu Sh. Ibragimova

Institutions: Tashkent Institute of Irrigation and Agricultural Mechanization Engineers, Urgench State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7128435969

FWCI: 11.38

Cites: 27

Cited by: 4

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