Three-terminal memcapacitive synapses based on a thin H-TiO2 layer
Year: 2026
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0311240
Institution: Shanghai Normal University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G5555765635, G8412656414, G938821173
OpenAlex ID: W7128443746